Analysis of width edge effects in advanced isolation schemes for deep submicron cmos technologies

IEEE Transactions on Electron Devices

Volumn 43, Issue 11, 1996, Pages 19001906-

  Sallagoity, P ^a   AdaHanifi, M ^a   Paoli, M ^a   Haond, M ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33747989104     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (17)

1. S. Deleonibus and F. Martin, "Exploration of LOCOStype isolation limit using SUPERSILO isolation by rapid thermal nitridation of silicon," J. Electron. Soc.,vol. 140, no. 10, p. 2908. 1993.
2. A. Perera and J.H. Lin, "Trench isolation for 0.45 /tm active pitch and below," in IEDM Tech. Dig.,1995, p. 679.
3. L. Akers and M. Sugino, "Characterization of the inverse narrowwidth effect," IEEE Trans. Electron Devices, vol. ED34, p. 2476, Dec. 1987.
4. A. Bryanl and W. Haensch, "Characteristics uf CMOS device isolation for the ULSl age," in IEDM Tech. nig.,1994, p. 671.
5. N. Shigyo and R. Dang, "Analysis of an anomalous suhthreshold current in a fully recessed oxide MOSFET using a threedimensional device simulator," IEEE Trans. Electron Devices, vol. ED32, p. 441, Feb. 1985.
6. Atlas user's manual, SILVACO International.
7. P. Sallagoily and M. AdaHaiiifi. "Simulation of threedimensional effects in the shallow trench isolation process," submitted for publication.
8. A. Bryant and W. Haensch. "The currentcarrying corner inherent to trench isolation," IEEE Electron Device Lett.,vol. 14, no. 8, p. 412, 1993.
9. N. Shigyo and S. Fukuda, "Threedimensional analysis of subthreshold swing and transconductance for fully recessed oxide (irenchi isolated 1/4μmwidth MOSFET's," IEEE Trans. Electron Devices,vol. 35, p. 945, July 1988.
10. J.M. Hwang and G. Pollack, "New gate electrodes for fullydepleted SOI/CMOS; TIN and poly SiGc," in 1992 Int. SOI Conf. Proc., p. 148.
11. x gate material for submicrometer CMOS technologies," IEEE Electron Device Lett.,vol. 12, no. 10, p. 533. 1991.
12. N. Kistler and J. Woo. "Symmetric CMOS in fullydepleted silicononinsulator using P+polycrystalline SiGe gate electrodes," in IEDM Tech. Dig.,1993, p. 727.
13. +polysilicon gate," IEEE Trans. Electron Devices,vol. 36, p. 1110, June 1989.
14. L. A. Akers. "The inversenarrowwidth effect." IEEE Electron Device Lett., vol. 7. no. 7, p. 419, 1986.
15. P. Sallagoity and G. Vincent. "3 D Analysis of a shallow trench isolated 0.25/0.25 /'in NMOS transistor," submitted for publication.
16. B. Agrawal and V. K. De, "Threedimensional analytical subthreshold models for bulk MOSFET's," IEEE Trans. Electron Devices,vol. 42. p. 2170, Dec. 1995.
17. N. Shigyo and T. Wada, "Steepsnhthreshold characteristic and enhanced transconductance fullyrecessed oxjde (trench) isolated 1/4 μm width MOSFET's," in IEDM Tech. Dig.,1987, p. 636.