A poly-Si thin-film transistor with the in situ vacuum gaps under the T-shaped-gated electrode

Electrochemical and Solid-State Letters

Volumn 9, Issue 12, 2006, Pages 347-350

  Liao, Ta Chuan ^a   Wu, Chun Yu ^a   Chien, Feng Tso ^b   Tsai, Chun Chien ^a   Chen, Hsiu Hsin ^a   Kung, Chung Yuan ^c   Cheng, Huang Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

^c NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; ENCAPSULATION; IN SITU PROCESSING; LEAKAGE CURRENTS; THIN FILMS; TRANSISTORS; VACUUM;

T SHAPED GATED (T-GATE); THIN FILM TRANSISTOR (TFT);

SILICON;

EID: 33750459850     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2357985     Document Type: Article

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