Infrared and transmission electron microscopy studies of ion-implanted H in GaN

Journal of Applied Physics

Volumn 85, Issue 5, 1999, Pages 2568-2573

  Seager, C H ^a   Myers, S M ^a   Petersen, G A ^a   Han, J ^a   Headley, T ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC PHYSICS; COMPUTER SIMULATION; DEUTERIUM; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE FILM; LOCALIZED ATOMIC VIBRATION; NUCLEAR REACTION ANALYSIS;

HYDROGEN BONDS;

EID: 0033089583     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369623     Document Type: Article

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