Process induced sub-surface damage in mechanically ground silicon wafers

Semiconductor Science and Technology

Volumn 23, Issue 7, 2008, Pages

  Yang, Yu ^a,b   De Munck, Koen ^a,b   Teixeira, Ricardo Cotrin ^a   Swinnen, Bart ^a   Verlinden, Bert ^b   De Wolf, Ingrid ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ARCHITECTURAL ACOUSTICS; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; GRINDING (COMMINUTION); GRINDING (MACHINING); IMAGING TECHNIQUES; LAW ENFORCEMENT; MECHANISMS; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; NONMETALS; SCANNING PROBE MICROSCOPY; SILICON;

AMORPHOUS LAYERS; AMORPHOUS SI; ATOMIC FORCE (AF); DAMAGE STRUCTURES; DUCTILE GRINDING; FINE GRINDING; MICRO-RAMAN SPECTROSCOPY (MRS); MULTILAYER (ML); PREFERENTIAL ETCHING; STRESSED LAYERS; SUB SURFACE DAMAGE (SSD); SUB-SURFACE CRACKS; ULTRA THIN SILICON; ULTRA-FINE GRINDING;

SILICON WAFERS;

EID: 47749120287     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/7/075038     Document Type: Article

References (29)

1. Takahashi K, Terao H, Tomita Y, Yamaji Y, Hoshino M, Sato T, Morifuji T, Sunohara M and Bonkohara M 2000 Japan. J. Appl. Phys. 40 3032
2. Swinnen B et al 2006 IEDM 1
3. Bulcke M, Vanden Baert K, Beyne E, Gonzalez M, Winters C and Webers T 2006 EMBS 2811
4. Lacsamana E S, Mena M G, Navarro R M, Kuan N and Spooner T R 2006 ECTC 1118
5. Paul I, Majeed B, Razeeb K M and Barton J 2006 Appl. Phys. Lett. 89 073506
6. Chen S, Tsai C Z, Wu E, Shih I G and Chen Y N 2006 IEEE Trans. Adv. Packag. 29 149
7. Watanabe M, Kozuki Y, Tomitsuka Y, Nakamura T and Inoue A 2002 Electrochem. Soc. Proc. 197
8. Pei Z J, Billingsley S R and Miura S 1999 Int. J. Mach. Tools Manuf. 39 33
9. Sun W, Zhu W H, Che F X, Wang C K, Sun A Y S and Tan H B 2007 ECTC 1390
10. Li J, Hwang H, Ahn W C, Chen Q, Kim P, Lee T, Chung M and Chung T 2007 ECTC 761
11. Haapalinna A, Nevas S and Pahler D 2004 Mater. Sci. Eng. B 107 321
12. Webster S, Smith D A and Batchelder D N 1998 Raman Spectrosc. 10 22
13. Gogotsi Y, Zhou G, Ku S S and Cetinkunt S 2001 Semicond. Sci. Technol. 16 345
14. Kailer A, Gogotsi Y G and Nickel K G 1997 J. Appl. Phys. 81 3057
15. Ruffell S, Bradby J E and Williams J S 2006 Appl. Phys. Lett. 89 091919
16. Bradby J E, Williams J S and Wong-Leung J 2000 Appl. Phys. Lett. 77 3749
17. Zhang L C and Zarudi I 2001 Int. J. Mech. Sci. 43 1985
18. Haberl B, Bradby J E, Ruffell S and Williams J S 2006 J. Appl. Phys. 100 013520
19. Gogotsi Y, Baek C and Kirscht F 1999 Semicond. Sci. Technol. 14 936
20. Chen J and De Wolf I 2003 Semicond. Sci. Technol. 18 261
21. De Wolf I 1996 Semicond. Sci. Technol. 11 139
22. Grasselli J G and Bulkin B J 1991 Analytical Raman Spectroscopy Chemical Analysis ed J D Winefordner (New York: Wiley)
23. Shimomura O, Minomura S, Sakai N, Asaumi K, Tamura K, Fukushima J and Endo H 1974 Phil. Mag. 29 547
24. Hu J Z, Merkle L D, Menoni S C and Spain I L 1986 Phys. Rev. B 34 4679
25. Pizani P S, Jasinevicius R G and Zanatta A R 2006 Appl. Phys. Lett. 89 031917
26. Khayyat M M, Banini G K, Hasko D G and Chaudhri M M 2003 J. Phys. D: Appl. Phys. 326 1300
27. Gupta M C and Ruoff A L 1980 J. Appl. Phys. 51 1072
28. Cheong W D C and Zhang L C 2000 Nanotechnology 11 173
29. Lawn B R and Swain M V 1975 J. Mater. Sci. 10 113