Emission dynamics of InAs self-assembled quantum dots with different cap layer structures

Semiconductor Science and Technology

Volumn 23, Issue 7, 2008, Pages

  Kong, Ling Min ^a   Feng, Zhe Chuan ^b   Wu, Zheng Yun ^c   Lu, Weijie ^d  

^a ZHEJIANG OCEAN UNIVERSITY   (China)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c XIAMEN UNIVERSITY   (China)

^d FISK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIVIL AVIATION; CRYSTALLOGRAPHY; DYNAMICS; INDIUM ARSENIDE; LIGHT EMISSION; LUMINESCENCE; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM; SOLIDS;

CAP LAYERS; CARRIER (CO); CONFINEMENT EFFECTS; EMISSION DYNAMICS; INDIUM SEGREGATION; PHOTOLUMINESCENCE (PL) DECAY TIME; PHOTOLUMINESCENCE (PL) INTENSITY; QUANTUM DOT (CO); SELF ASSEMBLED QUANTUM DOTS (SAQD); SELF-ASSEMBLED; TEMPERATURE STABILITY; TIME-RESOLVED PHOTOLUMINESCENCE (TRPL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 47749103751     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/7/075044     Document Type: Article

References (26)

1. Marzin J Y and Bastard G 1994 Solid State Commun. 92 437
2. Sanguinetti S, Henini M, Grassi Alessi M, Capizzi M, Frigeri P and Franchi S 1999 Phys. Rev. B 60 8276
3. Arpatzanis N, Tassis D H, Dimitriadis C A, Charitidis C, Song J D, Choi W J and Lee J I 2007 Semicond. Sci. Technol. 22 1086
4. Saito H, Nishi K and Sugou S 1998 Appl. Phys. Lett. 73 2742
5. Mukai K and Sugawara M 1999 Appl. Phys. Lett. 74 3963
6. Kong L M, Wu Z Y, Feng Z C and Ferguson I T 2007 J. Appl. Phys. 101 126101
7. Nishi K, Saito H, Sugou S and Lee J S 1999 Appl. Phys. Lett. 74 1111
8. Wang X D, Niu Z C, Feng S L and Miao Z H 2001 J. Cryst. Growth 223 363
9. Tarasov G G, Mazur Yu I, Zhuchenko Z Ya, Maadorf A, Nickel D, Tomm J W, Kissel H, Walther C and Masselink W T 2000 J. Appl. Phys. 88 7162
10. Liu H Y, Tey C M, Sellers I R, Badcock T J, Mowbray D J, Skolnick M S, Beanland R, Hopkinson M and Cullis A G 2005 J. Appl. Phys. 98 083516
11. Chang K P, Yang S L, Chuu D S, Hsiao R S, Chen J F, Wei L, Wang J S and Chi J Y 2005 J. Appl. Phys. 97 083511
12. Liu W S and Chyi J I 2005 J. Appl. Phys. 97 024312
13. Fang Z D, Gong Z, Miao Z H, Kong L M, Xu X H, Ni H Q and Niu Z C 2004 J. Phys. D: Appl. Phys. 37 1012
14. Kong L M, Cai J F, Wu Z Y, Gong Z, Niu Z C and Feng Z C 2006 Thin Solid Films 498 188
15. Kim J C, Rho H, Smith L M, Jackson H E, Lee S, Dobrowolska M and Furdyna J K 1999 Appl. Phys. Lett. 75 214
16. Paillard M, Marie X, Vanelle E, Amand T, Kalevich V K, Kovsh A R, Zhukov A E and Ustinov V M 2000 Appl. Phys. Lett. 76 76
17. Mu X D, Ding Y J, Ooi B S and Hopkinson M 2006 Appl. Phys. Lett. 89 181924
18. Yang W, Lowe-Webb R R, Lee H and Sercel P C 1997 Phys. Rev. B 56 13314
19. Boggess T F, Zhang L, Deppe D G, Huffaker D L and Cao C 2001 Appl. Phys. Lett. 78 276
20. Fiore A, Borri P, Langbein W, Hvam J M, Oesterle U, Houdré R, Stanley R P and Ilegems M 2000 Appl. Phys. Lett. 76 3430
21. Karachinsky Ya L, Pellegrini S, Buller G S, Shkolnik A S, Gordeev Yu N, Evtikhiev V P and Novikov V B 2004 Appl. Phys. Lett. 84 7
22. Langbein W, Borri P, Woggon U, Stavarache V, Reuter D and Wieck A D 2004 Phys. Rev. B 70 033301
23. Gurioli M, Vinattieri A, Zamfirescu M, Colocci M, Sanguinetti S and Richard Nötzel 2006 Phys. Rev. B 73 085302
24. Markus A, Fiore A, Ganière J D, Oesterle U, Chen J X, Deveaud B and Riechert H 2002 Appl. Phys. Lett. 80 911
25. Shu G W, Wang C K, Wang J S, Shen J L, Hsiao R S, Chou W C, Chen J F, Lin T Y, Ko C H and Lai C M 2006 Nanotechnology 17 5722
26. Pulizzi F, Kent A J, Patanè A, Eaves L and Henini M 2002 Appl. Phys. Lett. 84 3046