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Journal of Crystal Growth

Volumn 223, Issue 3, 2001, Pages 363-368

Effect of InxGa1-xAs (0≤x≤0.4) capping layer on self-assembled 1.3 μm wavelength InAs/GaAs quantum islands

(4) Wang, X D a Niu, Z C a Feng, S L a Miao, Z H a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; MONOLAYERS; NANOSTRUCTURED MATERIALS; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SUBSTRATES; THERMAL EFFECTS;

FULL WIDTH AT HALF MAXIMUM (FWHM); QUANTUM ISLANDS;

SEMICONDUCTING FILMS;

EID: 0034831507 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00671-6 Document Type: Article

Times cited : (12)

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