Current-voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots

Semiconductor Science and Technology

Volumn 22, Issue 10, 2007, Pages 1086-1091

  Arpatzanis, N ^a   Tassis, D H ^a   Dimitriadis, C A ^a   Charitidis, C ^b   Song, J D ^c   Choi, W J ^c   Lee, J I ^c  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^c Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; NATURAL FREQUENCIES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

DEPTH PROFILING MEASUREMENTS; LOW FREQUENCY NOISE MEASUREMENTS; REVERSE CURRENT NOISE SPECTRA; SPACE-CHARGE LIMITED CURRENT;

SCHOTTKY BARRIER DIODES;

EID: 34748881901     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/10/002     Document Type: Article

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