The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

Nanotechnology

Volumn 17, Issue 23, 2006, Pages 5722-5725

  Shu, G W ^a   Wang, C K ^a   Wang, J S ^a   Shen, J L ^a   Hsiao, R S ^b   Chou, W C ^b   Chen, J F ^b   Lin, T Y ^c   Ko, C H ^d   Lai, C M ^e  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^d YUAN ZE UNIVERSITY   (Taiwan)

^e MING CHUAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUUM MECHANICS; GROUND STATE; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

CONTINUUM STATES; PHONON-ASSISTED TRANSITION; PHOTOLUMINESCENCE DECAY; TEMPERATURE DEPENDENCE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33846048887     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/23/002     Document Type: Article

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