SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 498, Issue 1-2, 2006, Pages 188-192

Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots

(6) Kong, Ling Min a Cai, Jia Fa a Wu, Zheng Yun a Gong, Zheng b Niu, Zhi Chuan b Feng, Zhe Chuan c

a XIAMEN UNIVERSITY (China)

b INSTITUTE OF GEOLOGY AND GEOPHYSICS (China)

c NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

InAs self assembled QDs; Migration of carriers; Time resolved photoluminescence

Indexed keywords

ATOMIC FORCE MICROSCOPY; DENSITY (SPECIFIC GRAVITY); INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

INAS SELF-ASSEMBLED QD; MIGRATION OF CARRIERS; TIME-RESOLVED PHOTOLUMINESCENCE; WETTING LAYER (WL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 30944455686 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2005.07.079 Document Type: Conference Paper

Times cited : (21)

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