SCOPUS 정보 검색 플랫폼

Volumn 101, Issue 12, 2007, Pages

Photoluminescence characteristics of InAs self-assembled quantum dots in InGaAs/GaAs quantum well

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

CARRIER MIGRATION; SIGNAL EMITTING; STRESS RELEASE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34547285100 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2745410 Document Type: Article

Times cited : (17)

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