Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.3 μm emission self-assembled InAs/GaAs quantum dots

Journal of Physics D: Applied Physics

Volumn 37, Issue 7, 2004, Pages 1012-1016

  Fang, Z D ^a   Gong, Z ^a   Miao, Z H ^a   Kong, L M ^b   Xu, X H ^a   Ni, H Q ^a   Niu, Z C ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b XIAMEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON ENERGY LEVELS; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS;

COMBINATION STRAIN-REDUCING LAYERS (CSRL); CONFINEMENT POTENTIAL; ENERGY SPLITTING; PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 2342622135     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/37/7/010     Document Type: Article

References (22)

1. Wu W, Tucker J R, Solomon G S and Harris J S Jr 1997 Appl. Phys. Lett. 71 1083
2. Huffaker D L, Park G, Zou Z, Shchekin O B and Deppe D G 1998 Appl. Phys. Lett. 73 2564
3. Zhukov A E et al 1999 IEEE Photon. Technol. Lett. 11 1345
4. Shchekin O B, Ahn J and Deppe D G 2002 Electron. Lett. 38 712
5. Wang X D, Niu Z C, Feng S L and Miao Z H 2001 J. Cryst. Growth 223 363
6. Wang X, Niu Z and Feng S 2000 Japan. J. Appl. Phys. 39 5076
7. Xie Q, Madhukar A, Chen P and Kobayashi N P 1995 Phys. Rev. Lett. 75 2542
8. Krishna S, Raghavan S, Gray A L, Stintz A and Malloy K J 2002 Appl. Phys. Lett. 80 3898
9. Songmuang R, Kiravittaya S, Sawadsaringkarn M, Panyakeow S and Schmidt O G 2003 J. Cryst. Growth 251 166
10. Jia R, Jiang D S, Liu H Y, Wei Y Q, Xu B and Wang Z G 2002 J. Cryst. Growth 234 354
11. Wei Y Q, Wang S M, Ferdos F, Vakusic J and Larsson A 2002 Appl. Phys. Lett. 81 1621
12. Zhang Z Y, Xu B, Jin P, Meng X Q, Li Ch M, Ye X L and Wang Z G 2002 J. Appl. Phys. 92 511
13. Lee J I, Lee H G, Shin E J, Yu S, Kim D and Ihm G 1997 Appl. Phys. Lett 70 2885
14. Fang Z D, Gong Z, Miao Z H, Xu X H, Ni H Q and Niu Z C 2003 Chin. Phys. Lett. 20 2061
15. Maximov M V et al 2000 Phys. Rev. B 62 16671
16. Tsatsul'nikov A F et al 2000 J. Appl. Phys. 88 6272
17. Xie Q H, Chen P and Madhukar A 1994 Appl. Phys. Lett. 65 2051
18. Liu H Y, Xu B, Chen Y H, Ding D and Wang Z D 2000 J. Appl. Phys. 86 5433
19. Niu Z C, Wang X D, Miao Z H and Feng S L 2001 J. Cryst. Growth 227 1062
20. Lobo C, Leon R, Marcinkevicius S, Yang W, Scercel P C, Liao X Z, Zou J and Cockayne D J H 1999 Phys. Rev. B 60 16647
21. Leon R, Marcinkevicius S, Liao X Z, Zou J, Cockayne D J H and Fafare S 1999 Phys. Rev. B 60 R8517
22. Torchynska T V, Espinola C J L, Losade V E, Eliseev P G, Stintz A, Malloy K J and Pena S R 2003 Surf. Sci. 532-535 848