MeV ion-induced strain at nanoisland-semiconductor surface and interfaces

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 244, Issue 1, 2006, Pages 64-68

  Ghatak, J ^a   Satpati, B ^a   Umananda, M ^a   Satyam, P V ^a   Akimoto, K ^b   Ito, K ^b   Emoto, T ^c  

^a INSTITUTE OF PHYSICS   (India)

^b NAGOYA UNIVERSITY   (Japan)

^c TOYOTA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

HRTEM; Ion irradiation; Semiconductor interfaces; Strain

Indexed keywords

HRTEM; ION IRRADIATION; SEMICONDUCTOR INTERFACES;

CRYSTAL LATTICES; ELECTRONIC PROPERTIES; SEMICONDUCTOR MATERIALS; SILICON; SINGLE CRYSTALS; STRAIN; STRAIN MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

SURFACE PROPERTIES;

EID: 47649127961     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.11.016     Document Type: Conference Paper

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