Strain field observed at the SiO2/Si(111) interface

Surface Science

Volumn 438, Issue 1-3, 1999, Pages 107-115

  Emoto, T ^a   Akimoto, K ^a   Ichimiya, A ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDES; PHASE TRANSITIONS; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; STRAIN RATE; VACUUM APPLICATIONS; X RAY DIFFRACTION ANALYSIS;

ABSORPTION EFFECT; CRYSTAL AMORPHOUS INTERFACE; STRAIN FIELD;

INTERFACES (MATERIALS);

EID: 0033309775     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00560-9     Document Type: Article

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