Strain near SiO2-Si interface revealed by X-ray diffraction intensity enhancement

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 281-284

  Emoto, T ^a   Akimoto, K ^a   Ishikawa, Y ^a   Ichimiya, A ^a   Tanikawa, A ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); MOS DEVICES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA; X RAY CRYSTALLOGRAPHY;

DARWIN DYNAMICAL CALCULATIONS;

SEMICONDUCTING FILMS;

EID: 0034228436     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00879-8     Document Type: Article

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