SCOPUS 정보 검색 플랫폼

Volumn 91-92, Issue , 2002, Pages 457-461

Damage profiles determination in ultra-shallow B+ implanted Si by triple crystal X-ray diffraction and transmission electron microscopy

(6) Bocchi, C a Germini, F a Mukhamedzhanov, E Kh b Nasi, L a Privitera, V c Spinella, C c

a CNR (Italy)

b SHUBNIKOV INSTITUTE OF CRYSTALLOGRAPHY (Russian Federation)

c CNR IMETEM (Italy)

Author keywords

Defects formation; Ion implantation; Silicon; X ray diffraction

Indexed keywords

BORON; CRYSTAL DEFECTS; CRYSTAL LATTICES; ION IMPLANTATION; SIGNAL TO NOISE RATIO; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

LATTICE DISTORTION;

SEMICONDUCTING SILICON;

EID: 0037197482 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(01)01002-9 Document Type: Conference Paper

Times cited : (4)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.