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Volumn 267, Issue 1-2, 2004, Pages 140-144

A two-step metal organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0 0 0 1)

(11) Dadgar, A a Oleynik, N a Forster, D a Deiter, S a Witek, H a Blasing J a Bertram, F a Krtschil, A a Diez, A a Christen, J a Krost, A a

a OTTO VON GUERICKE UNIVERSITY (Germany)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Oxides; B2. Semiconducting II VI materials

Indexed keywords

ALUMINUM ALLOYS; CRYSTALLINE MATERIALS; EXCITONS; GALLIUM NITRIDE; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SAPPHIRE; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING II-VI MATERIALS; TERTIARY-BUTANOL PRECURSORS;

ZINC OXIDE;

EID: 2942513447 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.03.028 Document Type: Article

Times cited : (48)

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