A compact model of phase-change memory based on rate equations of crystallization and amorphization

IEEE Transactions on Electron Devices

Volumn 55, Issue 7, 2008, Pages 1672-1681

  Sonoda, Ken'ichiro ^a   Sakai, Atsushi ^a   Moniwa, Masahiro ^a   Ishikawa, Kiyoshi ^a   Tsuchiya, Osamu ^a   Inoue, Yasuo ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Amorphous semiconductors; Crystal growth; Phase transformers; Resistance heating; Semiconductor device modeling

Indexed keywords

AMORPHIZATION; CRYSTALLIZATION; EPITAXIAL GROWTH; HEALTH; NANOCRYSTALLINE ALLOYS; NANOSTRUCTURED MATERIALS; POWDERS;

COMPACT MODELING; CRYSTALLIZATION RATES; GROWTH MODELING; HEAT OF FUSION; IN ORDER; NONLINEAR CURRENT-VOLTAGE; PHASE CHANGE MEMORY (PCM); PHASE CHANGES; RATE EQUATIONS; RESISTANCE CHANGES; TEMPERATURE DEPENDENT;

PHASE CHANGE MEMORY;

EID: 46649093142     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.923740     Document Type: Article

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