Comprehensive numerical model for Phase-Change Memory simulations

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2005, Issue , 2005, Pages 279-282

  Redaelli, A ^a   Lacaita, A L ^a   Benvenuti, A ^b   Pirovano, A ^b  

^a POLITECNICO DI MILANO   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HEAT RADIATION; MATHEMATICAL MODELS; PHASE TRANSITIONS; SEMICONDUCTOR STORAGE; SWITCHING SYSTEMS;

AMORPHOUS CHALCOGENIDE ALLOY; ELECTRONIC SWITCHING EFFECT; PHASE TRANSITION DYNAMICS; PHASE-CHANGE MEMORY SIMULATIONS;

PHASE CHANGING CIRCUITS;

EID: 33845877142     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/sispad.2005.201527     Document Type: Conference Paper

References (7)

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6. A. Redaelli et al., "Electronic switching effect and Phase-change transition in chalcogenide materials ", IEEE Elect. Dev. Lett., vol. 25, n. 10, pp. 684-686, 2004.
7. A. L. Lacaita et al., "Electro-thermal and Phase-Change dvnamics in chalcogenide-based memories ", EDM Tech. Dig., 911-914, 2004.