Spice modelling of PCRAM devices

IEE Proceedings: Science, Measurement and Technology

Volumn 150, Issue 5, 2003, Pages 237-239

  Cobley, R A ^a   Wright, C D ^a  

^a UNIVERSITY OF EXETER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; GIANT MAGNETORESISTANCE; RANDOM ACCESS STORAGE; THRESHOLD VOLTAGE;

ANALOG BEHAVIOURAL MODEL; PHASE-CHANGE RANDOM ACCESS MEMORY;

COMPUTER SIMULATION;

EID: 0141904701     PISSN: 13502344     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-smt:20030889     Document Type: Article

References (9)

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3. Lai, S., and Lowry, T.L.: 'OUM - A 180 nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications', Proc. International electron devices meeting (IEDM), Washington DC, 2-5 December 2001, pp. 36.2. 1-4
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