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Volumn 28, Issue 11, 2007, Pages 973-975

A phase change memory compact model for multilevel applications

Author keywords

Compact model; Multilevel (ML); Nonvolatile memory; Phase change memory (PCM)

Indexed keywords

ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; MATHEMATICAL MODELS; NONVOLATILE STORAGE;

EID: 36148964821     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.907288     Document Type: Article
Times cited : (59)

References (14)
  • 1
    • 0842309810 scopus 로고    scopus 로고
    • Current status of phase change memory and its future
    • S. Lai, "Current status of phase change memory and its future," in IEDM Tech. Dig., 2003, pp. 255-258.
    • (2003) IEDM Tech. Dig , pp. 255-258
    • Lai, S.1
  • 2
    • 0015588086 scopus 로고
    • The application of amorphous materials to computer memories
    • Feb
    • R. G. Neale and J. A. Aseltine, "The application of amorphous materials to computer memories," IEEE Trans. Electron Devices, vol. ED-20, no. 2, pp.195-205,Feb.1973.
    • (1973) IEEE Trans. Electron Devices , vol.ED-20 , Issue.2 , pp. 195-205
    • Neale, R.G.1    Aseltine, J.A.2
  • 3
    • 34548814219 scopus 로고    scopus 로고
    • A 90 nm phase change memory technology for stand-alone non-volatile memory applications
    • F. Pellizzer et al., "A 90 nm phase change memory technology for stand-alone non-volatile memory applications," in VLSI Symp. Tech. Dig., 2006, pp.150-151.
    • (2006) VLSI Symp. Tech. Dig , pp. 150-151
    • Pellizzer, F.1
  • 4
    • 46049090421 scopus 로고    scopus 로고
    • Full integration of highly manufacturable 512 Mb PRAM based on 90 nm technology
    • J. H. Oh et al., "Full integration of highly manufacturable 512 Mb PRAM based on 90 nm technology," in IEDM Tech. Dig., 2006, pp. 49-52.
    • (2006) IEDM Tech. Dig , pp. 49-52
    • Oh, J.H.1
  • 5
    • 33745633904 scopus 로고    scopus 로고
    • P. Fantini, A. Pirovano, D. Ventrice, and A. Redaelli, Experimental investigation of transport properties in chalcogenide materials through I/f noise measurements,Appl. Phys. Lett., 88, no. 26, pp. 263 506-1-263 506-3, Jun. 2006.
    • P. Fantini, A. Pirovano, D. Ventrice, and A. Redaelli, "Experimental investigation of transport properties in chalcogenide materials through I/f noise measurements,"Appl. Phys. Lett., vol. 88, no. 26, pp. 263 506-1-263 506-3, Jun. 2006.
  • 7
    • 33947679297 scopus 로고    scopus 로고
    • HSPICE macromodel of PCRAM for binary and multilevel storage
    • Jan
    • X. Q. Wei et al., "HSPICE macromodel of PCRAM for binary and multilevel storage," IEEE Trans. Electron Devices, vol. 53, no. 1, pp. 56-62, Jan. 2006.
    • (2006) IEEE Trans. Electron Devices , vol.53 , Issue.1 , pp. 56-62
    • Wei, X.Q.1
  • 8
    • 33747741013 scopus 로고    scopus 로고
    • Parameterized SPICE model for a phase-change RAM device
    • Jan
    • R. A. Cobley and C. D. Wright, "Parameterized SPICE model for a phase-change RAM device," IEEE Trans. Electron Devices, vol. 53, no. 1, pp. 112-118, Jan. 2006.
    • (2006) IEEE Trans. Electron Devices , vol.53 , Issue.1 , pp. 112-118
    • Cobley, R.A.1    Wright, C.D.2
  • 9
    • 33947170507 scopus 로고    scopus 로고
    • PSP: An advanced surface-potential-based MOSFET model for circuit simulation
    • Sep
    • G. Gildenblat et al., "PSP: An advanced surface-potential-based MOSFET model for circuit simulation," IEEE Trans. Electron Devices vol. 53, no. 9, pp. 1979-1993, Sep. 2006.
    • (2006) IEEE Trans. Electron Devices , vol.53 , Issue.9 , pp. 1979-1993
    • Gildenblat, G.1
  • 11
    • 4544229593 scopus 로고    scopus 로고
    • Novel μ trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
    • F. Pellizzer et al., "Novel μ trench phase-change memory cell for embedded and stand-alone non-volatile memory applications," in VLSI Symp. Tech. Dig., 2004, pp. 18-19.
    • (2004) VLSI Symp. Tech. Dig , pp. 18-19
    • Pellizzer, F.1
  • 13
    • 0000732349 scopus 로고
    • Reaction kinetics in processes of nucleation and growth
    • W. A. Johnson and R. F. Mehl, "Reaction kinetics in processes of nucleation and growth," Trans. Amer. Inst. Min. Metall., vol. 135, pp. 416-458, 1939.
    • (1939) Trans. Amer. Inst. Min. Metall , vol.135 , pp. 416-458
    • Johnson, W.A.1    Mehl, R.F.2
  • 14
    • 33845877142 scopus 로고    scopus 로고
    • Comprehensive numerical model for phase-change memory simulations
    • A. Redaelli, A. Pirovano, A. Benvenuti, and A. L. Lacaita, "Comprehensive numerical model for phase-change memory simulations," in Proc. SISPAD, 2005, pp. 279-281.
    • (2005) Proc. SISPAD , pp. 279-281
    • Redaelli, A.1    Pirovano, A.2    Benvenuti, A.3    Lacaita, A.L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.