-
1
-
-
0842309810
-
Current status of phase change memory and its future
-
S. Lai, "Current status of phase change memory and its future," in IEDM Tech. Dig., 2003, pp. 255-258.
-
(2003)
IEDM Tech. Dig
, pp. 255-258
-
-
Lai, S.1
-
2
-
-
0015588086
-
The application of amorphous materials to computer memories
-
Feb
-
R. G. Neale and J. A. Aseltine, "The application of amorphous materials to computer memories," IEEE Trans. Electron Devices, vol. ED-20, no. 2, pp.195-205,Feb.1973.
-
(1973)
IEEE Trans. Electron Devices
, vol.ED-20
, Issue.2
, pp. 195-205
-
-
Neale, R.G.1
Aseltine, J.A.2
-
3
-
-
34548814219
-
A 90 nm phase change memory technology for stand-alone non-volatile memory applications
-
F. Pellizzer et al., "A 90 nm phase change memory technology for stand-alone non-volatile memory applications," in VLSI Symp. Tech. Dig., 2006, pp.150-151.
-
(2006)
VLSI Symp. Tech. Dig
, pp. 150-151
-
-
Pellizzer, F.1
-
4
-
-
46049090421
-
Full integration of highly manufacturable 512 Mb PRAM based on 90 nm technology
-
J. H. Oh et al., "Full integration of highly manufacturable 512 Mb PRAM based on 90 nm technology," in IEDM Tech. Dig., 2006, pp. 49-52.
-
(2006)
IEDM Tech. Dig
, pp. 49-52
-
-
Oh, J.H.1
-
5
-
-
33745633904
-
-
P. Fantini, A. Pirovano, D. Ventrice, and A. Redaelli, Experimental investigation of transport properties in chalcogenide materials through I/f noise measurements,Appl. Phys. Lett., 88, no. 26, pp. 263 506-1-263 506-3, Jun. 2006.
-
P. Fantini, A. Pirovano, D. Ventrice, and A. Redaelli, "Experimental investigation of transport properties in chalcogenide materials through I/f noise measurements,"Appl. Phys. Lett., vol. 88, no. 26, pp. 263 506-1-263 506-3, Jun. 2006.
-
-
-
-
6
-
-
42549168111
-
A compact model for phase change memories
-
P. Fantini, D. Ventrice, A. Benvenuti, A. Pirovano, G. Ferrari, and F. Pellizzer, "A compact model for phase change memories," in Proc. SISPAD, 2006, pp. 162-165.
-
(2006)
Proc. SISPAD
, pp. 162-165
-
-
Fantini, P.1
Ventrice, D.2
Benvenuti, A.3
Pirovano, A.4
Ferrari, G.5
Pellizzer, F.6
-
7
-
-
33947679297
-
HSPICE macromodel of PCRAM for binary and multilevel storage
-
Jan
-
X. Q. Wei et al., "HSPICE macromodel of PCRAM for binary and multilevel storage," IEEE Trans. Electron Devices, vol. 53, no. 1, pp. 56-62, Jan. 2006.
-
(2006)
IEEE Trans. Electron Devices
, vol.53
, Issue.1
, pp. 56-62
-
-
Wei, X.Q.1
-
8
-
-
33747741013
-
Parameterized SPICE model for a phase-change RAM device
-
Jan
-
R. A. Cobley and C. D. Wright, "Parameterized SPICE model for a phase-change RAM device," IEEE Trans. Electron Devices, vol. 53, no. 1, pp. 112-118, Jan. 2006.
-
(2006)
IEEE Trans. Electron Devices
, vol.53
, Issue.1
, pp. 112-118
-
-
Cobley, R.A.1
Wright, C.D.2
-
9
-
-
33947170507
-
PSP: An advanced surface-potential-based MOSFET model for circuit simulation
-
Sep
-
G. Gildenblat et al., "PSP: An advanced surface-potential-based MOSFET model for circuit simulation," IEEE Trans. Electron Devices vol. 53, no. 9, pp. 1979-1993, Sep. 2006.
-
(2006)
IEEE Trans. Electron Devices
, vol.53
, Issue.9
, pp. 1979-1993
-
-
Gildenblat, G.1
-
10
-
-
21644477080
-
Electrothermal and phase-change dynamics in chalcogenide-based memories
-
A. L. Lacaita, A. Redaelli, D. Ielmini, F. Pellizzer, A. Pirovano, A. Benvenuti, and R. Bez, "Electrothermal and phase-change dynamics in chalcogenide-based memories," in IEDM Tech. Dig., 2004, pp. 911-914.
-
(2004)
IEDM Tech. Dig
, pp. 911-914
-
-
Lacaita, A.L.1
Redaelli, A.2
Ielmini, D.3
Pellizzer, F.4
Pirovano, A.5
Benvenuti, A.6
Bez, R.7
-
11
-
-
4544229593
-
Novel μ trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
-
F. Pellizzer et al., "Novel μ trench phase-change memory cell for embedded and stand-alone non-volatile memory applications," in VLSI Symp. Tech. Dig., 2004, pp. 18-19.
-
(2004)
VLSI Symp. Tech. Dig
, pp. 18-19
-
-
Pellizzer, F.1
-
12
-
-
1642327470
-
Electronic switching in phase-change memories
-
Mar
-
A. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, and R. Bez, "Electronic switching in phase-change memories," IEEE Trans. Electron Devices, vol. 51, no. 3, pp. 452-459, Mar. 2004.
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, Issue.3
, pp. 452-459
-
-
Pirovano, A.1
Lacaita, A.L.2
Benvenuti, A.3
Pellizzer, F.4
Bez, R.5
-
13
-
-
0000732349
-
Reaction kinetics in processes of nucleation and growth
-
W. A. Johnson and R. F. Mehl, "Reaction kinetics in processes of nucleation and growth," Trans. Amer. Inst. Min. Metall., vol. 135, pp. 416-458, 1939.
-
(1939)
Trans. Amer. Inst. Min. Metall
, vol.135
, pp. 416-458
-
-
Johnson, W.A.1
Mehl, R.F.2
-
14
-
-
33845877142
-
Comprehensive numerical model for phase-change memory simulations
-
A. Redaelli, A. Pirovano, A. Benvenuti, and A. L. Lacaita, "Comprehensive numerical model for phase-change memory simulations," in Proc. SISPAD, 2005, pp. 279-281.
-
(2005)
Proc. SISPAD
, pp. 279-281
-
-
Redaelli, A.1
Pirovano, A.2
Benvenuti, A.3
Lacaita, A.L.4
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