Boron electrical activation in crystalline Si after millisecond nonmelting laser irradiation

Journal of the Electrochemical Society

Volumn 155, Issue 8, 2008, Pages

  Mannino, Giovanni ^a   La Magna, Antonino ^a   Privitera, Vittorio ^a   Christensen, Jens S ^b   Vines, Lasse ^b   Svensson, Bengt G ^b  

^a CNR IMM   (Italy)

^b UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DIFFUSION; LASERS; NONMETALS; PULSED LASER DEPOSITION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR DOPING; SILICON; STEEL ANALYSIS;

B ATOMS; CRYSTALLINE SI (C SI); DOPANT-DIFFUSION; ELECTRICAL ACTIVATION; ELECTROCHEMICAL SOCIETY (ECS); INFRARED (IR) LASERS; LASER IRRADIATIONS; MILLISECOND ANNEALING; PROCESS TEMPERATURES; SUBSTITUTIONAL SITES;

ANNEALING;

EID: 46649087817     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2939129     Document Type: Article

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