Depth distribution of B implanted in Si after excimer laser irradiation

Applied Physics Letters

Volumn 86, Issue 5, 2005, Pages 1-3

  Mannino, Giovanni ^a,b,c   Privitera, Vittorio ^a,b,c   La Magna, Antonino ^a,b,c   Rimini, Emanuele ^a,b,c   Napolitani, Enrico ^b,c   Fortunato, Guglielmo ^c   Mariucci, Luigi ^c  

^a CNR IMM   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c IFN CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; EPITAXIAL GROWTH; ION IMPLANTATION; IRRADIATION; SOLIDIFICATION;

DEPTH DISTRIBUTION; DOPANTS; EXCIMER LASER IRRADIATION; LASER MELTING;

EXCIMER LASERS;

EID: 18644372010     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1856696     Document Type: Article

References (14)

1. P. M. Fahey, P. B. Griffin, and J. D. Plummer, Rev. Mod. Phys. 61, 289 (1989).
2. N. E. B. Cowern, G. F. A. van de Walle, P. C. Zalm, and D. J. Oostra, Phys. Rev. Lett. 69, 116 (1992).
3. P. A. Stolk, H.-J. Gossman, D. J. Eaglesham, D. C. Jacobson, C. S. Rafferty, G. H. Gilmer, M. Jaraiz, J. M. Poate, H. S. Luftman, and T. E. Haynes, J. Appl. Phys. 81, 6031 (1997).
4. S. U. Campisano, Phys. Rev. A 30, 195 (1983).
5. E. Rimini, in Crystalline Semiconducting Materials and Devices, edited by, P. N. Buchter, (Plenum, New York, 1986).
6. P. S. Peercy, Nature (London) 406, 1023 (2000).
7. S. Whelan, A. La Magna, V. Privitera, G. Mannino, M. Italia, C. Bongiorno, G. Fortunato, and L. Mariucci, Phys. Rev. B 67, 075201 (2003).
8. L. C. Kimerling and J. L. Benton, in Laser and Electron Beam Processing of Materials, edited by, C. W. White, and, P. S. Peercy, (Academic, New York, 1980), and references therein.
9. R. Nipoti and M. Servidori, Appl. Surf. Sci. 43, 321 (1989).
10. N. E. B. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraiz, Phys. Rev. Lett. 82, 4460 (1999).
11. H.-J. Gossmann, T. E. Haynes, P. A. Stolk, D. Jacobson, G. H. Gilmer, J. M. Poate, H. S. Luftman, T. K. Mogi, and M. O. Thompson, Appl. Phys. Lett. 71, 3862 (1997).
12. FLOOPS process simulator: htttp:www.tec.ufl.edu~foolxs; ISE TCAD Release 9.0, User's Manual p. 7.62, ISE AG, Zurich.
13. M. D. Giles, J. Electrochem. Soc. 138, 1160 (1991).
14. S. D. Brotherton, J. Appl. Phys. 53, 5720 (1982).