Numerical study of flicker noise in p-type Si0.7 Ge0.3/Si heterostructure MOSFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 7, 2008, Pages 1741-1748

  Chen, Chia Yu ^a   Liu, Yang ^b   Dutton, Robert W ^a   Sato Iwanaga, Junko ^c   Inoue, Akira ^c   Sorada, Haruyuki ^c  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

^c PANASONIC CORPORATION   (Japan)

Author keywords

1 f noise; Flicker noise; Heterostructure; MOSFETs; SiGe

Indexed keywords

FLICKER NOISES; LOW FREQUENCY NOISE (1/F NOISE); NUMERICAL STUDIES; P-TYPE SI; SIMULATION CAPABILITIES;

NUMERICAL ANALYSIS;

EID: 46649083607     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.925329     Document Type: Article

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