Low Frequency Noise (LFN) Characteristics of SiGe Channel SOI Dynamic Threshold MOSFETs (SiGe-SOI-DTMOS) for Low-Power Applications

IEEE International SOI Conference

Volumn , Issue , 2003, Pages 149-150

  Inoue, A ^a   Asai, A ^a   Kawashima, Y ^a   Sorada, H ^a   Kanzawa, Y ^a   Kawashima, T ^a   Hara, H ^a   Takagi, T ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

LOW FREQUENCY NOISE (LFN);

MOSFET DEVICES;

EID: 0142185859     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/soi.2003.1242932     Document Type: Conference Paper

References (4)

1. T. Takagi et al., IEEE Electron Device Letters, vol. 22, No. 5, p. 206, 2001.
2. A. Asai et al., IEDM Tech Dig., p. 35, 2002.
3. H. Sorada et al., ICSI3 Dig., p. 158, 2003.
4. T. Kawashima et al., DRC Dig., p. 51, 2002.