Numerical investigation of low frequency noise in MOSFETs with high-κ gate stacks

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2006, Pages 99-102

  Yang, Liu ^a   Shuqing, Cao ^a   Dutton, Robert W ^a  

^a Stanford University   (United States)

Author keywords

Field effect transistor; HfO2; Impedance field; Noise

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; ELECTRIC IMPEDANCE; HEAVY IONS;

APPROXIMATE CHANNEL CURRENTS; NONUNIFORM TRAP ENERGY;

MOSFET DEVICES;

EID: 42549100447     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2006.282847     Document Type: Conference Paper

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