Low frequency noise characteristics in SiGe channel heterostructure dynamic threshold pMOSFET (HDTMOS)

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 35-38

  Asai, Akira ^a   Sato Iwanaga, Junko ^a   Inoue, Akira ^a   Hara, Yoshihiro ^a   Kanzawa, Yoshihiko ^a   Sorada, Haruyuki ^a   Kawashima, Takahiro ^a   Ohnishi, Teruhito ^a   Takagi, Takeshi ^a   Kubo, Minoru ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DRAIN CURRENT NOISE;

MOSFET DEVICES;

EID: 0036928402     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. S.J.Mathew, G.Niu, W.B.Dubbelday, J.D.Cressler, J.A.Ott, J.O.Chu, P.M.Mooney, K.L.Kavanagh, B.S.Meyerson, and I.Langnado, "Hole confinement and its impact on low-frequency noise in SiGe pFETs on Sapphire," IEDM Tech Dig., pp. 815-818, 1997.
2. x MOSFET's," IEEE Trans. Electron Devices, vol. 46, pp. 1484-1486, July 1999.
3. S.Okhonin, M.A.Py, B.Georgescu, H.Fischer, and L.Risch, "DC and low-frequency noise characteristics on SiGe p-channel FET's designed for 0.13-μm technology," IEEE Trans. Electron Devices, vol. 46, pp. 1514-1517, July 1999.
4. x-channel pMOSFETs," Proc. 1st International Workshop on New Croup IV (Si-Ge-C) Semiconductors, II-01, 2001.
5. S.Haendler, J.Jomaah, F.Balestra, and J.L.Pelloie, "Comparative low frequency noise analysis in various SOI devices:floating body, body-tied, DTMOS with and without current limiter," IEEE SOI Conf. Proc., 2000, pp. 126-127.
6. C.Jakobson, I.Bloom, and Y.Nemirovsky, "1/f noise in CMOS transistor for analog applications from subthreshold to saturation," Solid-State Electron., vol. 42, pp.1807-1817, 1998.
7. T.Takagi, A.Inoue, Y.Hara, Y.Kanzawa, and M.Kubo, "A novel high performance SiGe channel heterostructure dynamic threshold pMOSFET (HDTMOS)," IEEE Electron Device Letters, vol. 22, No.5, pp. 206-208, July 2001.