Temperature distributions in AlGaN/GaN HEMTs measured by micro-Raman scattering spectroscopy

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 57-60

  Ohno, Y ^a   Akita, M ^a   Kishimoto, S ^a   Maezawa, K ^a   Mizutani, T ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTRIC LOSSES; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NITRIDES; RAMAN SCATTERING; TEMPERATURE DISTRIBUTION; THERMAL CONDUCTIVITY; WIDE BAND GAP SEMICONDUCTORS;

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; HIGH-FIELD REGIONS; HIGHEST TEMPERATURE; MICRO RAMAN SCATTERING SPECTROSCOPY; PEAK TEMPERATURES; TEMPERATURE RESOLUTION; TEMPERATURE-DEPENDENT THERMAL CONDUCTIVITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0242668527     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390116     Document Type: Conference Paper

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