Performance, reliability, and manufacturability of AlGaN/GaN high electron mobility transistors on silicon carbide substrates

ECS Transactions

Volumn 3, Issue 5, 2006, Pages 161-179

  Brown, J D ^a   Green, D S ^a   Gibb, S R ^a   Shealy, J B ^a   McKenna, J ^a   Poulton, M ^a   Lee, S ^a   Gratzer, K ^a   Hosse, B ^a   Mercier, T ^a   Yang, Y ^a   Young, M G ^a   Vetury, R ^a  

^a RF MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; GROWTH (MATERIALS); HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE DEVICES; SILICON CARBIDE;

MICROWAVE APPLICATIONS; RADIO FREQUENCY (RF) APPLICATION; WIRELESS BASESTATIONS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33846958114     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2357206     Document Type: Conference Paper

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