Degradation mechanisms of Ta and Ta-Si diffusion barriers during thermal stressing

Thin Solid Films

Volumn 458, Issue 1-2, 2004, Pages 237-245

  Hubner R ^a   Hecker, M ^a   Mattern, N ^a   Hoffmann, V ^a   Wetzig, K ^a   Wenger, Ch ^b   Engelmann, H J ^c   Wenzel, Ch ^b   Zschech, E ^c  

^a IFW DRESDEN   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^c IBM MICROELECTRONICS   (United States)

Author keywords

Cu metallization; Diffusion barriers; Glow discharge optical emission spectroscopy; X Ray diffraction

Indexed keywords

ANNEALING; DEGRADATION; DIFFUSION; EMISSION SPECTROSCOPY; GLOW DISCHARGES; MICROSTRUCTURE; TANTALUM COMPOUNDS; THERMAL STRESS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

COPPER METALLIZATION; DIFFUSION BARRIERS; GLOW DISCHARGE OPTICAL EMISSION SPETCROSCOPY; X-RAY REFLECTROMETRY;

TANTALUM;

EID: 17944394992     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.11.313     Document Type: Article

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