Tantalum and niobium as a diffusion barrier between copper and silicon

Journal of Materials Science: Materials in Electronics

Volumn 7, Issue 4, 1996, Pages 271-278

  Jang, S I Yeoul ^a  

^a Kangwon National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION BARRIER; SHEET RESISTANCE MEASUREMENT; SILICIDES;

AUGER ELECTRON SPECTROSCOPY; COPPER; ELECTRIC RESISTANCE MEASUREMENT; INTERDIFFUSION (SOLIDS); NIOBIUM; OPTICAL MICROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; TANTALUM; THERMODYNAMIC STABILITY; X RAY DIFFRACTION;

THIN FILMS;

EID: 0030212480     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00188954     Document Type: Article

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