a-C:F:H films prepared by PECVD

Transactions of Nonferrous Metals Society of China (English Edition)

Volumn 14, Issue 3, 2004, Pages 426-429

  Liu, Xiong Fei ^a   Xiao, Jian Rong ^a   Jian, Xian Zhong ^b   Wang, Jin Bin ^c   Gao, Jin Ding ^a  

^a CENTRAL SOUTH UNIVERSITY   (China)

^b UNIVERSITY OF SHANGHAI FOR SCIENCE AND TECHNOLOGY   (China)

^c SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

a C:F:H thin films; Dielectric constant; Optical band gap; PECVD

Indexed keywords

AMORPHOUS FILMS; FILM PREPARATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; THIN FILMS;

DEPOSITION RATE; DIELECTRIC CONSTANT; OPTICAL BAND GAP; SINGLE WAVELENGTH SPECTROSCOPIC ELLIPSOMETRY; ULTRAVIOLET VISIBLE SPECTROMETRY;

DIELECTRIC FILMS;

EID: 4644274154     PISSN: 10036326     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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