Nanomachining processes for 45, 32 nm node mask repair-and beyond

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7028, Issue , 2008, Pages

  Robinson, Tod ^a   Dinsdale, Andrew ^a   Bozak, Ron ^a   White, Roy ^a   Archuletta, Michael ^a  

^a RAVE LLC   (United States)

Author keywords

32 nm node; 45 nm node; CPL; Cr binary; EAPSM; High aspect mask repair; High aspect tips; MoSi EPSM; Nanomachining; Particle cleaning

Indexed keywords

ASPECT RATIO; CHROMIUM; COMPUTER NETWORKS; DEBRIS; DEFECT STRUCTURES; DIMENSIONAL STABILITY; LITHOGRAPHY; MAINTENANCE; MICROFLUIDICS; NANOTECHNOLOGY; NUMERICAL METHODS; PHOTOMASKS; TECHNOLOGY; TWO DIMENSIONAL; WIRELESS TELECOMMUNICATION SYSTEMS;

(2+1)-DIMENSIONAL; (E ,3E) PROCESS; (OTDR) TECHNOLOGY; 45 NM TECHNOLOGY; BINARY MASKS; COMPLEX PATTERNING; MASK REPAIR; MASK STRUCTURES; MASK TECHNOLOGY; NANO-MACHINING; NEW PROCESSES; NEXT-GENERATION LITHOGRAPHY (NGL); PHOTO MASKING; PHYSICAL PHENOMENON; SIDEWALL ANGLES; TANGENTIAL STRESSES; TECHNICAL REQUIREMENT (TR); TIP DEFLECTION; TRANSITION (JEL CLASSIFICATIONS:E52 ,E41 ,E31);

REPAIR;

EID: 45549088735     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.793052     Document Type: Conference Paper

References (11)

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