Use of nanomachining for subtractive repair of EUV and other challenging mask defects

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4754, Issue , 2002, Pages 900-911

  Brinkley, David ^a   White, Roy ^b   Bozak, Ron ^b   Liang, Ted ^a   Liu, Gang ^a  

^a INTEL CORPORATION   (United States)

^b RAVE LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; LITHOGRAPHY; MACHINING; NANOTECHNOLOGY; ULTRAVIOLET RADIATION;

NANOMACHINING;

MASKS;

EID: 0942267633     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.476998     Document Type: Conference Paper

References (8)

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3. th Annual BACUS Symposium on Photomask Technology (2000), Proceedings of SPIE Vol. 4186, p. 670.
4. R. DeJule, "Masks: What's Behind Rising Costs," Semiconductor International, Vol 22, No 10, pp. 58-64, '99, http://www.semiconductor.net/semiconductor/issues/issues/1999/sep99/docs/feature 5.asp.
5. "International Technology Roadmap for Semiconductors, 2000 Update, Lithography Section." http://public.itrs.net/Files/2000UpdateFinal/Lithography2000final.pdf.
6. John G. Maltabes, "Issues for Advanced Reticle Fabrication: (You want that reticle when?)," Future Fab International, Vol. 11, http://www.future-fab.com/documents.asp?d_ID=639.
7. Charles Waxer, "Process Capability (Cp, Cpk) and Process Performance (Pp, Ppk) - What's the Difference?" http://www.isixsigma.com/library/content/c010806a.asp.
8. "Lithography ITWG Report," ITRS Conference, November 29, 2001, Santa Clara, CA.