Use of nanomachining as a technique to reduce scrap of high end photomasks

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4562 I, Issue , 2001, Pages 213-224

  White, Roy ^a   Verbeek, Martin ^b   Bozak, Ron ^a   Klos, Marty ^a  

^a RAVE LLC   (United States)

^b INFINEON TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DRY ETCHING; IMAGE PROCESSING; MACHINING; NANOTECHNOLOGY; PHASE SHIFT; QUARTZ; STATISTICAL METHODS; SURFACE PROPERTIES;

PHOTOMASKS;

MASKS;

EID: 0035763610     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.458294     Document Type: Article

References (4)

1. R. DeJule, "Masks: What's Behind Rising Costs," Semiconductor International, Vol 22, No 10, pp. 58-64, '99, http://www.semiconductor.net/semiconductor/issues/issues/1999/sep99/docs/feature 5.asp.
2. "International Technology Roadmap for Semiconductors, 2000 Update, Lithography Section." http://public.itrs.net/Files/2000UpdateFinal/Lithography2000final.pdf.
3. John G. Maltabes, "Issues for Advanced Reticle Fabrication: (You want that reticle when?)," Future Fab International, Vol. 11, http://www.future-fab.com/documents.asp?d_ID=639.
4. Charles Waxer, "Process Capability (Cp, Cpk) and Process Performance (Pp, Ppk) - What's the Difference?" http://www.isixsigma.com/library/content/c010806a.asp.