Computed growth rates of (001) GaN substrates in the hydride vapour phase method

Physica Status Solidi (A) Applied Research

Volumn 183, Issue 1, 2001, Pages 5-9

  Cadoret, R ^a,b   Trassoudaine, A ^a   Aujol, E ^a  

^a UNIVERSITÉ BLAISE PASCAL   (France)

^b NONE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CHLORINE; DESORPTION; EPITAXIAL GROWTH; HYDROGEN; MATHEMATICAL MODELS; MOLECULES; NITROGEN; NUCLEATION; PARTIAL PRESSURE; SUBSTRATES; TEMPERATURE;

GROWTH RATE; HYDRIDE VAPOUR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 0035120012     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200101)183:1<5::AID-PSSA5>3.0.CO;2-K     Document Type: Article

References (9)

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