SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 225, Issue 2-4, 2001, Pages 268-273

Quasi-thermodynamic model of SiGe epitaxial growth

(4) Segal, A S a Karpov, S Yu a Sid'ko, A P a Makarov, Yu N b

a SOFT IMPACT LTD (Russian Federation)

b UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

A1. Growth models; A3. Chemical vapor depositions processes; B1. Germanium silicon alloys

Indexed keywords

ADSORPTION; CHEMICAL VAPOR DEPOSITION; CRYSTAL LATTICES; EPITAXIAL GROWTH; HEAT RADIATION; HYDROGEN; SEMICONDUCTOR GROWTH; SILANES; STRAIN; THERMODYNAMICS;

QUASITHERMODYNAMIC APPROACH; SILICON GERMANIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035333227 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00848-X Document Type: Conference Paper

Times cited : (9)

References (8)

1
- 0033689423
- (2000) J. Crystal Growth , vol.216 , pp. 171
- Bozzo, S.¹ Lazzari, J.-L.² Coudreau, C.³ Ronda, A.⁴ Arnaud d'Avitaya, F.⁵ Derrien, J.⁶ Mesters, S.⁷ Hollaender, B.⁸ Gergaud, P.⁹ Thomas, O.¹⁰

2
- 36449009642
- (1991) J. Appl. Phys. , vol.69 , pp. 3729
- Robbins, D.J.¹ Glasper, J.L.² Gullis, A.G.³ Leong, W.Y.⁴

3
- 0031103264
- (1997) J. Crystal Growth , vol.172 , pp. 381
- Jin, X.¹ Liang, J.²

4
- 0030540775
- (1996) J. Vac. Sci. Tech. A , vol.14 , pp. 170
- Li, C.¹ John, S.² Quinones, E.³ Banerjee, S.⁴

5
- 0002558774
- (1999) MRS Internet J. Nitride Semicond. Res. , vol.4 , pp. 4
- Karpov, S.Yu.¹ Prokofyev, V.G.² Yakovlev, E.V.³ Talalaev, R.A.⁴ Makarov, Yu.N.⁵

6
- 0004856711
- to be published, Toronto
- (2000) Proceedings of 15th International Conference on Chemical Vapor Deposition
- Segal, A.S.¹ Kondratyev, A.V.² Galyukov, A.O.³ Karpov, S.Yu.⁴ Makarov, Yu.N.⁵ Siebert, W.⁶ Storck, P.⁷ Lowry, S.⁸

7
- 0024620141
- (1989) J. Electrochem. Soc. , vol.136 , pp. 819
- Coltrin, M.E.¹ Kee, R.J.² Evans, G.H.³

8
- 0030563083
- (1996) J. Crystal Growth , vol.162 , pp. 15
- Alexeev, A.N.¹ Karpov, S.Yu.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.