Impact of LKD5109™ low-k to cap/liner interfaces in single damascene process and performance

Microelectronic Engineering

Volumn 70, Issue 2-4, 2003, Pages 293-301

  Iacopi, F ^a,b   Patz, M ^c   Vos, I ^a   Tokei, Zs ^a   Sijmus, B ^a   Le, Q T ^a   Sleeckx, E ^a   Eyckens, B ^a   Struyf, H ^a   Das, A ^a   Maex, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c JSR CORPORATION   (Japan)

Author keywords

Breakdown field; CMP; FF02 ; Interfacial adhesion; Leakage current; LKD5109 ; Porous low k films

Indexed keywords

ADHESION; DEFECTS; DEGRADATION; FRACTURE; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PERMITTIVITY; SURFACE TREATMENT;

BREAKDOWN FIELDS;

DIELECTRIC FILMS;

EID: 0142043402     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00387-3     Document Type: Conference Paper

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