Crystalline rare-earth oxides as high-κ materials for future CMOS technologies

ECS Transactions

Volumn 11, Issue 4, 2007, Pages 287-297

  Osten, H J ^a   Laha, A ^a   Czemohorsky, M ^a   Dargis, R ^a   Bugiei, E ^a   Fissel, A ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTAL ATOMIC STRUCTURE; DIELECTRIC PROPERTIES; GADOLINIUM COMPOUNDS; LOGIC GATES; MOLECULAR BEAM EPITAXY; MOS DEVICES; NANOCRYSTALLINE MATERIALS; OXIDE FILMS; OXYGEN SUPPLY; RARE EARTHS; SILICA; SILICON OXIDES;

BIXBYITE STRUCTURE; GADOLINIUM OXIDE; INTERFACIAL LAYER; INTERFACIAL STRUCTURES; OPTIMIZED CONDITIONS; RARE EARTH OXIDE; SILICON SURFACES; SOLID SOURCE MOLECULAR BEAM EPITAXY;

DIELECTRIC MATERIALS;

EID: 45249111147     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2779568     Document Type: Conference Paper

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