Investigation of MOS capacitors and SOI-MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes

Solid-State Electronics

Volumn 51, Issue 4 SPEC. ISS., 2007, Pages 617-621

  Echtermeyer, T ^a   Gottlob, H D B ^a   Wahlbrink, T ^a   Mollenhauer, T ^a   Schmidt, M ^a   Efavi, J K ^a   Lemme, M C ^a   Kurz, H ^a  

^a AMO GMBH   (Germany)

Author keywords

CMOS; High k; Metal gate; Rare earth oxide

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRODES; EPITAXIAL GROWTH; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; TITANIUM NITRIDE;

GATE ELECTRODES; GATE STACKS; THERMAL ANNEALING;

MOS CAPACITORS;

EID: 34047247848     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.02.008     Document Type: Article

References (12)

1. International technology roadmap for Semiconductors; 2005 Edition. .
2. Wilk G.D., et al. High-k gate dielectrics: current status and material properties considerations. J Appl Phys 89 10 (2001) 5243-5275
3. 3 high-k dielectrics and FUSI NiSi metal electrodes. IEEE Electr Dev Lett 27 10 (2006)
4. Osten H.J., Bugiel E., Czernohorsky M., Elassar Z., Kirfel O., and Fissel A. Molecular beam epitaxy of rare-earth oxides. Rare earth oxide thin films: growth, characterization, and application. Topics in applied physics vol. 106 (2007), Springer-Verlag 101-114
5. Bae S.H., et al. Thickness optimization of the TiN metal gate with polysilicon-capping layer on Hf-based high-k dielectric. Microelectron Eng 83 (2006) 460-462
6. 3 thin films on Si(0 0 1). Appl Phys Lett 88 (2006) 152905
7. 3 high-k gate dielectrics. Solid State Electron 50 6 (2006) 979-985
8. Lemme M.C., et al. Nanoscale TiN metal gate technology for CMOS integration. Microelectron Eng 83 4-9 (2006) 1551-1554
9. Nicollian E.H., and Brews J.R. MOS (metal oxide semiconductor) physics and technology (1982), John Wiley & Sons Inc.
10. Christoloveanu S., and Li S.S. Electrical characterization of silicon-on-insulator materials and devices (1995), Kluwer Academic Publishers
11. Kuo J.B., and Su K.-W. CMOS VLSI engineering. Silicon-on-insulator (SOI) (1998), Kluwer Academic Publishers
12. Colinge J.P. Conduction mechanisms in thin-film accumulation-mode SOI p-channel MOSFET's. IEEE Trans Electr Dev 37 3 (1990) 718-723