Constraints on micro-Raman strain metrology for highly doped strained Si materials

Applied Physics Letters

Volumn 92, Issue 23, 2008, Pages

  O'Reilly, L ^a   Horan, K ^a   McNally, P J ^a   Bennett, N S ^b   Cowern, N E B ^b   Lankinen, A ^c   Sealy, B J ^d   Gwilliam, R M ^d   Noakes, T C Q ^e   Bailey, P ^e  

^a DUBLIN CITY UNIVERSITY   (Ireland)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

^c AALTO UNIVERSITY   (Finland)

^d UNIVERSITY OF SURREY   (United Kingdom)

^e DARESBURY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ARCHITECTURAL ACOUSTICS; CARBON NANOTUBES; CARRIER CONCENTRATION; DOPING (ADDITIVES); ION BOMBARDMENT; ION IMPLANTATION; LAWS AND LEGISLATION; METAL ANALYSIS; PIGMENTS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON; SPECTRUM ANALYSIS; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY;

(ABIOTIC AND BIOTIC) STRESS; (MO Y) DOPING; AMERICAN INSTITUTE OF PHYSICS (AIP); CARRIER (CO); COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICES (CMOS); CONCENTRATION (COMPOSITION); DOPANT ACTIVATION; DOPANT IMPLANTATION; HIGH RESOLUTION X RAY DIFFRACTION (HR XRD); LOW ENERGIES; MICRO-RAMAN; MICRO-RAMAN SPECTROSCOPY (MRS); PENETRATION DEPTHS; RAMAN PEAKS; RAMAN SHIFTING; RED SHIFTING; SI-BASED MATERIALS; STRAIN CHARACTERIZATION; STRAINED-SI; ULTRA SHALLOW JUNCTION (USJ); ULTRAVIOLET (UV);

SEMICONDUCTING SILICON;

EID: 45149120525     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2942392     Document Type: Article

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