Antimony for n -type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 1, 2008, Pages 391-395

  Bennett, N S ^a   Smith, A J ^a   Gwilliam, R M ^a   Webb, R P ^a   Sealy, B J ^a   Cowern, N E B ^b   O'Reilly, L ^c   McNally, P J ^c  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

^c DUBLIN CITY UNIVERSITY   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; ARSENIC; DOPING (ADDITIVES); SEMICONDUCTOR JUNCTIONS; SHEET RESISTANCE; SILICON;

JUNCTION STEEPNESS; ULTRASHALLOW JUNCTIONS;

MOS DEVICES;

EID: 38849198706     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2816929     Document Type: Article

References (17)

1. The International Technology Roadmap for Semiconductors 2006 update.
2. F. Schaffler, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/12/12/001 12, 1515 (1997).
3. T. Alzanki, R. Gwilliam, N. Emerson, and B. J. Sealy, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1792378 85, 1979 (2004).
4. N. S. Bennett, N. E. B. Cowern, A. J. Smith, R. M. Gwilliam, B. J. Sealy, L. O'Reilly, P. J. McNally, G. Cooke, and H. Kheyrandish, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2382741 89, 182122 (2006).
5. C. W. White, S. R. Wilson, B. R. Appleton, and F. W. Young, Jr., J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.327334 51, 738 (1980).
6. R. Duffy, T. Dao, Y. Tamminga, K. van der Tak, F. Roozeboom, and E. Augendre, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2337081 89, 071915 (2006).
7. B. Sadigh, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1484557 80, 4738 (2002).
8. N. Sugii, S. Irieda, J. Morioka, and T. Inada, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1758318 96, 261 (2004).
9. J. Adey, R. Jones, and P. R. Briddon, Phys. Status Solidi C ZZZZZZ 1610-1634 2, 1953 (2005).
10. V. Koteski, N. Ivanovic, H. Haas, E. Holub-Krappe, and H. E. Mahnke, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 10.1016/S0168-583X(02) 01675-0 200, 60 (2003).
11. C. Reverant-Brizard, J. R. Regnard, S. Solmi, A. Armigliato, S. Valmorri, C. Cellini, and F. Romanato, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.362636 79, 9037 (1996).
12. N. S. Bennett, A. J. Smith, B. Colombeau, R. Gwilliam, N. E. B. Cowern, and B. J. Sealy, Mater. Sci. Eng., B MSBTEK 0921-5107 124-125, 305 (2005).
13. P. Kringhoj, A. N. Larsen, and S. Y. Shirayev, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.76.3372 76, 3372 (1996).
14. J. S. Williams, Nucl. Instrum. Methods Phys. Res. NIMRD9 0167-5087 209-210, 219 (1983).
15. R. Duffy, V. C. Venezia, K. van der Tak, M. J. P. Hopstaken, G. C. J. Maas, F. Roozeboom, Y. Tamminga, and T. Dao, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.2044813 23, 2021 (2005).
16. S. Gannavaram, N. Pesovic, and C. Ozturk, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2000, 437.
17. T. Sanuki, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2003, 65.