Highly conductive Sb-doped layers in strained Si

Applied Physics Letters

Volumn 89, Issue 18, 2006, Pages

  Bennett, N S ^a   Cowern, N E B ^a   Smith, A J ^a   Gwilliam, R M ^a   Sealy, B J ^a   O'Reilly, L ^b   McNally, P J ^b   Cooke, G ^c   Kheyrandish, H ^c  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b DUBLIN CITY UNIVERSITY   (Ireland)

^c CSMA MATS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ION IMPLANTATION; STRAIN; TENSILE STRENGTH;

DOPING EFFICIENCY; SHEET RESISTANCE; ULTRASHALLOW JUNCTIONS;

SEMICONDUCTING SILICON;

EID: 33750725122     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2382741     Document Type: Article

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