Differential Hall profiling of ultra-shallow junctions in Si and SOI

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 305-309

  Bennett, N S ^a   Smith, A J ^a   Colombeau, B ^a   Gwilliam, R ^a   Cowern, N E B ^a   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Differential Hall measurement; SOI; Ultra shallow junctions

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; COMPUTER SIMULATION; DOPING (ADDITIVES); HALL EFFECT; ION IMPLANTATION; SILICON ON INSULATOR TECHNOLOGY;

DEPTH RESOLUTION; DIFFERENTIAL HALL MEASUREMENT; DOPED LAYERS; ULTRA-SHALLOW JUNCTIONS;

SILICON;

EID: 27844567747     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.020     Document Type: Conference Paper

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