Alternative magnesium calcium oxide gate dielectric for silicon carbide MOS application

Materials Research Society Symposium Proceedings

Volumn 911, Issue , 2006, Pages 347-352

  Stodilka, D O ^a   Gerger, A P ^a   Hlad, M ^a   Kumar, P ^a   Gila, B P ^a   Singh, R ^a,b   Abernathy, C R ^a   Pearton, S J ^a   Ren, F ^a  

^a University of Florida   (United States)

^b Sinmat Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; FILM GROWTH; GATES (TRANSISTOR); MOS DEVICES; SILICON CARBIDE; THIN FILMS;

ELECTRICAL BREAKDOWN FIELDS; INTERFACE STATES; OXIDE CHARGES; ROOT MEAN SQUARE (RMS) ROUGHNESS;

DIELECTRIC MATERIALS;

EID: 33750335009     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0911-b14-03     Document Type: Conference Paper

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