High-temperature characteristics of high-quality SiC MIS capacitors with O/N/O gate dielectric

IEEE Transactions on Electron Devices

Volumn 47, Issue 2, 2000, Pages 458-463

  Wang, Xiewen W ^a  

^a Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON TRAPS; GATES (TRANSISTOR); HOLE TRAPS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON CARBIDE; SILICON NITRIDE;

JET VAPOR DEPOSITION (JVD);

MOS CAPACITORS;

EID: 0033908957     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.822294     Document Type: Article

References (14)

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