Gate dielectrics for Si, SiC, and GaN as synthesized by jet vapor deposition

Microelectronics Journal

Volumn 34, Issue 5-8, 2003, Pages 363-370

  Ma, T P ^a  

^a Yale University   (United States)

Author keywords

Gate dielectrics; Jet vapor deposition; MOSFET

Indexed keywords

DEPOSITION; MOSFET DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SILICON NITRIDE; SYNTHESIS (CHEMICAL);

JET VAPOR DEPOSITION (JVD);

DIELECTRIC MATERIALS;

EID: 0038581736     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00026-0     Document Type: Conference Paper

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