Investigation of Ta2O5/SiO2/4H-SiC MIS capacitors

Microelectronic Engineering

Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 58-60

  Zhao, P ^a   Rusli, ^a   Lok, B K ^b   Lai, F K ^b   Tin, C C ^c   Zhao, J H ^a   Yar, R M ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^c AUBURN UNIVERSITY   (United States)

Author keywords

Capacitance; Interface; MIS; SiC; Ta2O5

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; ELECTRODES; MAGNETRON SPUTTERING; METAL INSULATOR BOUNDARIES; SILICON COMPOUNDS;

GATE DIELECTRIC; INTERFACE; METAL-INSULATOR-SEMICONDUCTOR (MIS);

TANTALUM COMPOUNDS;

EID: 30344488418     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.025     Document Type: Conference Paper

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