How lifetime fluctuations, grain-boundary recombination, and junctions affect lifetime measurements and their correlation to silicon solar cell performance

Solar Energy Materials and Solar Cells

Volumn 92, Issue 9, 2008, Pages 1123-1135

  Metzger, Wyatt K ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Device modeling; Grain boundary; Photoconductivity; Recombination lifetime; Silicon

Indexed keywords

ELECTRIC CHARGE; GRAIN BOUNDARIES; MATHEMATICAL MODELS; PHOTOCONDUCTIVITY; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

BEAM SIZE; CHARGE SEPARATION; DEVICE MODELING; RECOMBINATION LIFETIME;

SOLAR CELLS;

EID: 45049084704     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.04.001     Document Type: Article

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