Spatially resolved modeling of the combined effect of dislocations and grain boundaries on minority carrier lifetime in multicrystalline silicon

Journal of Applied Physics

Volumn 101, Issue 5, 2007, Pages

  Stokkan, G ^a   Riepe, S ^b   Lohne, O ^a   Warta, W ^b  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; TRANSITION METALS;

CARRIER DENSITY IMAGING (CDI); ELECTRON BACKSCATTER DIFFRACTION (EBSD); HIGH SPATIAL RESOLUTION; INTERSTITIAL TRANSITION METALS;

SILICON;

EID: 33947310609     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2435815     Document Type: Article

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