Spatial distribution of minority-carrier lifetime and local concentration of impurities in multicrystalline silicon solar cells

Solar Energy Materials and Solar Cells

Volumn 74, Issue 1-4, 2002, Pages 183-193

  Kurobe, Ken Ichi ^a   Miura, Mineo ^a   Hirano, Kenji ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Distribution; Grain boundary; Iron; Lifetime; Multicrystalline silicon; Segregation; SIMS; Solar cell

Indexed keywords

CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; GRAIN BOUNDARIES; IRON; SECONDARY ION MASS SPECTROMETRY; SEGREGATION (METALLOGRAPHY);

CARRIER LIFETIME;

SILICON SOLAR CELLS;

EID: 0036778467     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(02)00063-6     Document Type: Article

References (4)

1. Production technology of large area multicrystalline silicon solar cells
2. A 19.8 efficient honeycomb multicrystalline silicon solar cell with improved light trapping
3. Switching time in junction diodes and junction transistors
4. Temperature dependence of minority-carrier lifetime in iron-diffused p-type silicon wafers